The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The hafnium overlayer shows a mixture of the dioxide and the suboxide. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. No trace of elemental hafnium is observed in the deposited overlayer. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and. In the other type, the substrate temperature was held fixed at some value during the deposition. After the deposition, the substrate temperature was increased to 100, 200, and. In one type, the substrate was kept at the ambient temperature. About 20 of hafnium were deposited on silicon substrates using the electron beam evaporation technique.
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